New modular converter topologies (MMC, MHF), will enable the use of lower voltage semiconductors where the applications are covered by Si-IGBTs, up to now. Especially, in the voltage class up to 650 volts, unipolar devices, based on silicon or GaN offer great potential for future progress. Converters based on switching cells and multilayer boards become attractive, because a high level of integration and ultra-low loss can be achieved. According to these trends, a converter design with focus on scalability, low stray inductance, integrated gate drive and integrated DC-link is built. More information can be found in the literature [1-5].
Publications
[1] Kapaun Florian. 2019. Konzeption und Untersuchung eines fehlertoleranten FET-Umrichters. IPEC Forschungsberichte Leistungselektronik und Steuerungen 11. Dissertation. Aachen: Shaker Verlag.
[2] Kapaun Florian, Dahmen Christopher and Marquardt Rainer, "New concept for fault tolerant PCB based converters," IEEE 12th Intern. Conf. on Power Electronics and Drive Systems (PEDS), Honolulu, HI, USA, 2017, pp. 331-335.
[3] Kapaun Florian and Marquardt Rainer, "Shoot-Through and avalanche behavior of high speed FET converter," PCIM Europe; Intern. Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2017.
[4] Kapaun Florian, Rolff Christian and Marquardt Rainer, "Switching performance of GaN-HEMT compared to Si-devices in new converters based on scalable converter cell structures," 9th Intern. Conf. on Integrated Power Electronics Systems (CIPS), Nuremberg, Germany, 2016.
[5] Schulz Martin, Kapaun Florian and Marquardt Rainer, "Scalable high frequnecy converter for motor drives based on switsching cells," 8th Intern. Conf. on Integrated Power Electronics Systems (CIPS), Nuremberg, Germany, 2014.